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cf4 Analysis for Hitachi

cf4 Analysis for Hitachi

: T FE, C2F4— C+CF4 ( - 2 5 7 kJ / m ol ) i i .i P T F E ( )

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    2018-11-22Redo other analysis with three membranes involved but with the flow evenly divided into M1,M2 and M3 (200, 200, 200). This because the first analysis were done with different flow between the three membranes (150, 300, 300). With an equal flow in M1, M2 and M3 we expected an higher concentration of CF4 because

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  • Resist trimming technique in CF4/O2 high-density

    2003-5-1Those lines with spacing-to-linewidth ratio on each side greater than 5 are known as the isolated lines. The linewidth before trimming is often referred to as the developed inspection critical dimension (DICD). After trimming, it is called the final inspection critical dimension (FICD). All the CD measurements were carried out using a HitachiCited by: 4

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  • Increase of Stratospheric Carbon Tetrafluoride

    CF4, or tetrafluoromethane, is a chemically inert and strongly absorbing greenhouse gas, mainly of anthropogenic origin. In order to monitor and reduce its atmospheric emissions and concentration

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  • CF4 plasma surface modification of asymmetric

    2012-7-15CF 4 plasma treatment showed a moderate etching and a strong fluorination effect which introduced fluorine functional groups in the material. Therefore CF 4 plasma surface modification can be used to reduce the surface energy, enhance the material surface roughness and make the material surface

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  • Thermal Decomposition Measurement TA 66 MAR

    1) Nobuaki Okubo, Application Brief TA No.63, Hitachi High-Tech Science Corporation (1993) 2) R. Kinoshita, Y. Teramoto and T. Nakano, The 27th Japanese Conference on Calorimetry and Thermal Analysis, 1101A (1991) 3) R. Kinoshita, Y. Teramoto and H. Yoshida, Netsu Sokutei, 19, 64(1992)File Size: 195KB

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  • Clean Solution System : Hitachi High-Tech GLOBAL

    Hitachi High-Tech is able to propose solutions for solving clean issues from various perspectives. 3. Creating Value through Customer Collaboration. Although it is very important to accumulate know-how in-house, you dont have to

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  • A dual-channel gas chromatography method for the

    2013-9-131. J Chromatogr A. 2013 Sep 13;1307:180-90. doi: 10.1016/j.chroma.2013.07.101. Epub 2013 Aug 1. A dual-channel gas chromatography method for the quantitation of low and high concentrations of NF3 and CF4 to study membrane separation of the two compounds.Cited by: 2

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  • Miyako Matsuis research works | Hitachi, Ltd., Tokyo and

    Analysis of surface damage induced in silicon substrates by reactive ion etching of silicon dioxide

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  • 聚四氟乙烯聚合反应爆聚分析及其预防措

    Translate this›百度文库›行业资料爆聚过程严格的讲可分为两个部分: 一是在釜内T FE 发生歧化反应的过程,即 C2F4— C+CF4 ( - 2 5 7 kJ / m ol ) i i .i 聚合爆聚理论分析 聚四氟乙烯 聚 合 反 应 机 理 P T F E 是由单体四氟乙烯在无机过硫酸盐( 常用过硫 酸铵或过硫酸钾)为引发剂的条件下

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  • Gold etching for microfabrication | SpringerLink

    2014-5-11The etching of gold is a key enabling technology in the fabrication of many microdevices and is widely used in the electronic, optoelectronic and microelectromechanical systems (MEMS) industries. In this review, we examine some of the available methods for patterning gold thin films using dry and wet etching

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