News Center
sf6 o2 process for Mitsubishi

sf6 o2 process for Mitsubishi

Passivation mechanisms in cryogenic SF6/O2 etchingThe bias voltage is about −90 V and the total process duration is 6 min. The O2/SF6 ratio over etch rate and undercut is studied in Ar/SF6 cryoetching pulsed process. It showed that the Si(1 0 0 ...

[email protected]
News Detail
edge-iconRelated News
toTop
Click avatar to contact us
Chat Online